Floating gate memory based on MoS2 channel and iCVD polymer dielectric with metal nanoparticle charge trapping layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Woo, Myung Hun | ko |
| dc.contributor.author | Jang, Byung Chul | ko |
| dc.contributor.author | Choi, Junhwan | ko |
| dc.contributor.author | Shin, Gwang Hyuk | ko |
| dc.contributor.author | Seong, Hyejeong | ko |
| dc.contributor.author | Im, Sung Gap | ko |
| dc.contributor.author | Choi, Sung Yool | ko |
| dc.date.accessioned | 2016-07-04T02:15:44Z | - |
| dc.date.available | 2016-07-04T02:15:44Z | - |
| dc.date.created | 2016-05-02 | - |
| dc.date.created | 2016-05-02 | - |
| dc.date.issued | 2016-04-14 | - |
| dc.identifier.citation | 제3회 한국 그래핀 심포지엄 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/208939 | - |
| dc.language | Korean | - |
| dc.publisher | 한국그래핀연구회 | - |
| dc.title | Floating gate memory based on MoS2 channel and iCVD polymer dielectric with metal nanoparticle charge trapping layer | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제3회 한국 그래핀 심포지엄 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 부여(롯데리조트) | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Choi, Sung Yool | - |
| dc.contributor.nonIdAuthor | Woo, Myung Hun | - |
| dc.contributor.nonIdAuthor | Jang, Byung Chul | - |
| dc.contributor.nonIdAuthor | Choi, Junhwan | - |
| dc.contributor.nonIdAuthor | Shin, Gwang Hyuk | - |
| dc.contributor.nonIdAuthor | Seong, Hyejeong | - |
| dc.contributor.nonIdAuthor | Im, Sung Gap | - |
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