DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Chulmin | ko |
dc.contributor.author | Oh, Y. T. | ko |
dc.contributor.author | Lee, Jeong Yong | ko |
dc.contributor.author | Sukegawa, Hiroaki | ko |
dc.contributor.author | Mitani, Seiji | ko |
dc.contributor.author | Song, Yunheub | ko |
dc.date.accessioned | 2016-07-04T01:54:31Z | - |
dc.date.available | 2016-07-04T01:54:31Z | - |
dc.date.created | 2016-04-27 | - |
dc.date.created | 2016-04-27 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.52, no.7, pp.531 - 532 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/208741 | - |
dc.description.abstract | The stress-induced resistance drift in MgO-based magnetic tunnel junctions (MTJs) with Mg insertion layer above and below a MgO tunnel barrier is investigated. Mg insertion suppresses the resistance drift. Resistance drift characteristics are improved when electrons tunnel into the Mg-inserted barrier-electrode interface, indicating that Mg insertion significantly suppresses trap site formation at the anode-side barrier-electrode interface. However, transmission electron microscopy images confirm that there is little difference in interface crystallinity between the Mg-inserted and non-inserted interfaces. Therefore, it is shown that a slight modification of the barrier-electrode interface states has a significant impact on resistance drift characteristics, and Mg insertion on both interface sides appears to be an effective way to improve MTJ device reliability in practical applications | - |
dc.language | English | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.subject | MEMORY | - |
dc.title | Effect of Mg insertion on stress-induced resistance drift in MgO-based magnetic tunnel junctions | - |
dc.type | Article | - |
dc.identifier.wosid | 000372982300022 | - |
dc.identifier.scopusid | 2-s2.0-84962374577 | - |
dc.type.rims | ART | - |
dc.citation.volume | 52 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 531 | - |
dc.citation.endingpage | 532 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.identifier.doi | 10.1049/el.2015.4299 | - |
dc.contributor.localauthor | Lee, Jeong Yong | - |
dc.contributor.nonIdAuthor | Choi, Chulmin | - |
dc.contributor.nonIdAuthor | Oh, Y. T. | - |
dc.contributor.nonIdAuthor | Sukegawa, Hiroaki | - |
dc.contributor.nonIdAuthor | Mitani, Seiji | - |
dc.contributor.nonIdAuthor | Song, Yunheub | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MEMORY | - |
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