DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Eung Taek | ko |
dc.contributor.author | Jang, Woo jae | ko |
dc.contributor.author | Kim, Woohyun | ko |
dc.contributor.author | Park, Junhong | ko |
dc.contributor.author | Lee, Myung Keun | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Choi, Kyung Cheol | ko |
dc.date.accessioned | 2016-06-30T00:35:25Z | - |
dc.date.available | 2016-06-30T00:35:25Z | - |
dc.date.created | 2016-01-06 | - |
dc.date.created | 2016-01-06 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.1066 - 1071 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/208669 | - |
dc.description.abstract | We suggest functional passivation layers in the form of a distributed Bragg reflector (DBR) composed of ZnS and LiF for transparent thin-film transistors (TFTs) to improve the stability under negative bias illumination stress (NBIS). The luminous transmittance of the DBR was 82.0% when the number of dyads was 3.5, and the thicknesses of ZnS and LiF were 42 and 85 nm, respectively. We applied the DBR to TFTs based on amorphous indium-gallium-zinc oxide without the degradation of electrical performance, such as the mobility, ON-OFF ratio, subthreshold swing, and V-ON. The luminous transmittance of the TFT with the DBR was measured as 71.6%. Delta V-ON of the TFT with the DBR was reduced to -1.119 V compared with that of the reference TFT, which is -3.261 V when a 1.25 MV/cm electric field was applied, and white light was illuminated during 3000 s. This confirms that the functional passivation layers suggested, in this paper, provide a solution to suppress the instability of TFTs in the NBIS and enhance the optical transmittance of transparent displays. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TRANSPARENT | - |
dc.subject | ENCAPSULATION | - |
dc.title | Suppressed Instability of a-IGZO Thin-Film Transistors Under Negative Bias Illumination Stress Using the Distributed Bragg Reflectors | - |
dc.type | Article | - |
dc.identifier.wosid | 000372356900024 | - |
dc.identifier.scopusid | 2-s2.0-84955165955 | - |
dc.type.rims | ART | - |
dc.citation.volume | 63 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 1066 | - |
dc.citation.endingpage | 1071 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2015.2513414 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.localauthor | Choi, Kyung Cheol | - |
dc.contributor.nonIdAuthor | Jang, Woo jae | - |
dc.contributor.nonIdAuthor | Kim, Woohyun | - |
dc.contributor.nonIdAuthor | Park, Junhong | - |
dc.contributor.nonIdAuthor | Lee, Myung Keun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | a-IGZO thin-film transistors (TFTs) | - |
dc.subject.keywordAuthor | distributed Bragg reflectors (DBRs) | - |
dc.subject.keywordAuthor | negative bias illumination stress (NBIS) | - |
dc.subject.keywordAuthor | transparent displays | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | ENCAPSULATION | - |
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