DC Field | Value | Language |
---|---|---|
dc.contributor.author | YOO, JY | ko |
dc.contributor.author | SHIN, JH | ko |
dc.contributor.author | Lee, Yong-Hee | ko |
dc.contributor.author | Park, HyoHoon | ko |
dc.contributor.author | YOO, BS | ko |
dc.date.accessioned | 2010-12-08T07:50:22Z | - |
dc.date.available | 2010-12-08T07:50:22Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-05 | - |
dc.identifier.citation | OPTICAL AND QUANTUM ELECTRONICS, v.27, no.5, pp.421 - 425 | - |
dc.identifier.issn | 0306-8919 | - |
dc.identifier.uri | http://hdl.handle.net/10203/20835 | - |
dc.description.abstract | Precision etch-depth control is realized by a chemically assisted ion-beam etching system incorporated with in situ laser reflectometry. By counting the number of interference fringes, etch-depth control better than a quarter-wave thickness is easily obtained. Optimized etching conditions for highly anisotropic etching of bulk GaAs and AlGaAs/GaAs distributed Bragg reflectors are obtained. With the ability to etch-stop just below the active region by the in situ monitoring, InGaAs vertical-cavity surface-emitting lasers with CW threshold current density as low as 380 A cm-2 with output power > 11 mW are fabricated. Spatial uniformity is 5% over a 1-cm2 sample, which corresponds to one pair over 20 pairs of quarter-wave stacks of AlGaAs/GaAs distributed Bragg reflectors. | - |
dc.description.sponsorship | This work was supported by the Opto-Electronic Research Center and the Electronics and Telecommunications Research Institute in Korea. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | CHAPMAN HALL LTD | - |
dc.subject | TEMPERATURE | - |
dc.title | PRECISE NONSELECTIVE CHEMICALLY ASSISTED ION-BEAM ETCHING OF ALGAAS GAAS BRAGG REFLECTORS BY IN-SITU LASER REFLECTOMETRY | - |
dc.type | Article | - |
dc.identifier.wosid | A1995RE99800016 | - |
dc.identifier.scopusid | 2-s2.0-0029306857 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 421 | - |
dc.citation.endingpage | 425 | - |
dc.citation.publicationname | OPTICAL AND QUANTUM ELECTRONICS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Yong-Hee | - |
dc.contributor.localauthor | Park, HyoHoon | - |
dc.contributor.nonIdAuthor | YOO, JY | - |
dc.contributor.nonIdAuthor | SHIN, JH | - |
dc.contributor.nonIdAuthor | YOO, BS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TEMPERATURE | - |
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