PRECISE NONSELECTIVE CHEMICALLY ASSISTED ION-BEAM ETCHING OF ALGAAS GAAS BRAGG REFLECTORS BY IN-SITU LASER REFLECTOMETRY

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dc.contributor.authorYOO, JYko
dc.contributor.authorSHIN, JHko
dc.contributor.authorLee, Yong-Heeko
dc.contributor.authorPark, HyoHoonko
dc.contributor.authorYOO, BSko
dc.date.accessioned2010-12-08T07:50:22Z-
dc.date.available2010-12-08T07:50:22Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-05-
dc.identifier.citationOPTICAL AND QUANTUM ELECTRONICS, v.27, no.5, pp.421 - 425-
dc.identifier.issn0306-8919-
dc.identifier.urihttp://hdl.handle.net/10203/20835-
dc.description.abstractPrecision etch-depth control is realized by a chemically assisted ion-beam etching system incorporated with in situ laser reflectometry. By counting the number of interference fringes, etch-depth control better than a quarter-wave thickness is easily obtained. Optimized etching conditions for highly anisotropic etching of bulk GaAs and AlGaAs/GaAs distributed Bragg reflectors are obtained. With the ability to etch-stop just below the active region by the in situ monitoring, InGaAs vertical-cavity surface-emitting lasers with CW threshold current density as low as 380 A cm-2 with output power > 11 mW are fabricated. Spatial uniformity is 5% over a 1-cm2 sample, which corresponds to one pair over 20 pairs of quarter-wave stacks of AlGaAs/GaAs distributed Bragg reflectors.-
dc.description.sponsorshipThis work was supported by the Opto-Electronic Research Center and the Electronics and Telecommunications Research Institute in Korea.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherCHAPMAN HALL LTD-
dc.subjectTEMPERATURE-
dc.titlePRECISE NONSELECTIVE CHEMICALLY ASSISTED ION-BEAM ETCHING OF ALGAAS GAAS BRAGG REFLECTORS BY IN-SITU LASER REFLECTOMETRY-
dc.typeArticle-
dc.identifier.wosidA1995RE99800016-
dc.identifier.scopusid2-s2.0-0029306857-
dc.type.rimsART-
dc.citation.volume27-
dc.citation.issue5-
dc.citation.beginningpage421-
dc.citation.endingpage425-
dc.citation.publicationnameOPTICAL AND QUANTUM ELECTRONICS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.localauthorPark, HyoHoon-
dc.contributor.nonIdAuthorYOO, JY-
dc.contributor.nonIdAuthorSHIN, JH-
dc.contributor.nonIdAuthorYOO, BS-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTEMPERATURE-
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