The effect of void on characteristics of LDMOS power amplifier
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Son, Mi-Hyun | ko |
| dc.contributor.author | Bae, Sooho | ko |
| dc.contributor.author | Park, Hyuncheol | ko |
| dc.contributor.author | Kwon, Hyuck M. | ko |
| dc.date.accessioned | 2016-05-16T04:32:27Z | - |
| dc.date.available | 2016-05-16T04:32:27Z | - |
| dc.date.created | 2015-12-27 | - |
| dc.date.created | 2015-12-27 | - |
| dc.date.created | 2015-12-27 | - |
| dc.date.issued | 2016-03 | - |
| dc.identifier.citation | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.58, no.3, pp.691 - 694 | - |
| dc.identifier.issn | 0895-2477 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/207368 | - |
| dc.description.abstract | The effect of void on characteristics of the laterally diffused metal oxide semiconductor (LDMOS) power amplifier (PA) is analyzed using the thermal and circuit analysis together. Thermal analysis is performed for finding the junction temperature of LDMOS PA as void area changes. Circuit analysis is performed from these results and LDMOS PA libraries. The analysis results show the linearity, gain, and efficiency degradation in the LDMOS PA as a result of the increase in void area. And this simulation methodology can be used for the design of the PA. | - |
| dc.language | English | - |
| dc.publisher | WILEY-BLACKWELL | - |
| dc.title | The effect of void on characteristics of LDMOS power amplifier | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000369166100049 | - |
| dc.identifier.scopusid | 2-s2.0-84957063328 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 58 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 691 | - |
| dc.citation.endingpage | 694 | - |
| dc.citation.publicationname | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
| dc.identifier.doi | 10.1002/mop.29642 | - |
| dc.contributor.localauthor | Park, Hyuncheol | - |
| dc.contributor.nonIdAuthor | Son, Mi-Hyun | - |
| dc.contributor.nonIdAuthor | Bae, Sooho | - |
| dc.contributor.nonIdAuthor | Kwon, Hyuck M. | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | void | - |
| dc.subject.keywordAuthor | LDMOS | - |
| dc.subject.keywordAuthor | power amplifier | - |
| dc.subject.keywordAuthor | RRH | - |
| dc.subject.keywordAuthor | linearity | - |
| dc.subject.keywordPlus | TEMPERATURE | - |
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 1 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.