DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Steve | ko |
dc.contributor.author | Nam, Ji Hyun | ko |
dc.contributor.author | Koo, Ja Hoon | ko |
dc.contributor.author | Lei, Ting | ko |
dc.contributor.author | Bao, Zhenan | ko |
dc.date.accessioned | 2016-05-16T02:37:44Z | - |
dc.date.available | 2016-05-16T02:37:44Z | - |
dc.date.created | 2016-02-22 | - |
dc.date.created | 2016-02-22 | - |
dc.date.created | 2016-02-22 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.106, no.10 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/207315 | - |
dc.description.abstract | We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C-60 on top. The addition of C-60 was observed to have two effects in enhancing ambipolar characteristics. First, C-60 served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C-60 itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C-60 ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | RING OSCILLATORS | - |
dc.subject | CIRCUITS | - |
dc.subject | CONDUCTION | - |
dc.subject | INKS | - |
dc.title | Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C-60 and fabrication of logic gates | - |
dc.type | Article | - |
dc.identifier.wosid | 000351397600059 | - |
dc.identifier.scopusid | 2-s2.0-84924710363 | - |
dc.type.rims | ART | - |
dc.citation.volume | 106 | - |
dc.citation.issue | 10 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4914476 | - |
dc.contributor.localauthor | Park, Steve | - |
dc.contributor.nonIdAuthor | Nam, Ji Hyun | - |
dc.contributor.nonIdAuthor | Koo, Ja Hoon | - |
dc.contributor.nonIdAuthor | Lei, Ting | - |
dc.contributor.nonIdAuthor | Bao, Zhenan | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | RING OSCILLATORS | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordPlus | INKS | - |
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