Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C-60 and fabrication of logic gates

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dc.contributor.authorPark, Steveko
dc.contributor.authorNam, Ji Hyunko
dc.contributor.authorKoo, Ja Hoonko
dc.contributor.authorLei, Tingko
dc.contributor.authorBao, Zhenanko
dc.date.accessioned2016-05-16T02:37:44Z-
dc.date.available2016-05-16T02:37:44Z-
dc.date.created2016-02-22-
dc.date.created2016-02-22-
dc.date.created2016-02-22-
dc.date.issued2015-03-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.106, no.10-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/207315-
dc.description.abstractWe demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C-60 on top. The addition of C-60 was observed to have two effects in enhancing ambipolar characteristics. First, C-60 served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C-60 itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C-60 ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates. (C) 2015 AIP Publishing LLC.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectRING OSCILLATORS-
dc.subjectCIRCUITS-
dc.subjectCONDUCTION-
dc.subjectINKS-
dc.titleEnhancement of ambipolar characteristics in single-walled carbon nanotubes using C-60 and fabrication of logic gates-
dc.typeArticle-
dc.identifier.wosid000351397600059-
dc.identifier.scopusid2-s2.0-84924710363-
dc.type.rimsART-
dc.citation.volume106-
dc.citation.issue10-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.4914476-
dc.contributor.localauthorPark, Steve-
dc.contributor.nonIdAuthorNam, Ji Hyun-
dc.contributor.nonIdAuthorKoo, Ja Hoon-
dc.contributor.nonIdAuthorLei, Ting-
dc.contributor.nonIdAuthorBao, Zhenan-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusRING OSCILLATORS-
dc.subject.keywordPlusCIRCUITS-
dc.subject.keywordPlusCONDUCTION-
dc.subject.keywordPlusINKS-
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