Selective sub-10 nm etching of SiO2 layer by carbothermal reduction using single walled carbon nanotubes

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dc.contributor.authorByon, Hye Ryungko
dc.contributor.authorChoi, Hee Cheulko
dc.date.accessioned2016-05-12T03:10:14Z-
dc.date.available2016-05-12T03:10:14Z-
dc.date.created2016-02-17-
dc.date.created2016-02-17-
dc.date.issued2007-03-
dc.identifier.citationABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, v.233, pp.478 - 478-
dc.identifier.issn0065-7727-
dc.identifier.urihttp://hdl.handle.net/10203/207266-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleSelective sub-10 nm etching of SiO2 layer by carbothermal reduction using single walled carbon nanotubes-
dc.typeArticle-
dc.identifier.wosid000207722805466-
dc.type.rimsART-
dc.citation.volume233-
dc.citation.beginningpage478-
dc.citation.endingpage478-
dc.citation.publicationnameABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY-
dc.contributor.localauthorByon, Hye Ryung-
dc.contributor.nonIdAuthorChoi, Hee Cheul-
dc.type.journalArticleMeeting Abstract-
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