DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Kun-Rok | ko |
dc.contributor.author | Min, Byoung-Chul | ko |
dc.contributor.author | Lee, Hun-Sung | ko |
dc.contributor.author | Shin, Il-Jae | ko |
dc.contributor.author | Park, Chang-Yup | ko |
dc.contributor.author | Shin, Sung-Chul | ko |
dc.date.accessioned | 2010-11-25T07:36:37Z | - |
dc.date.available | 2010-11-25T07:36:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.97, no.2 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/20412 | - |
dc.description.abstract | We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the single crystalline CoFe(5.0 nm) / MgO / n-Ge(001) tunnel contacts with an ultrathin MgO thickness of 1.5, 2.0, and 2.5 nm have been investigated by the I-V-T and C-V measurements. Interestingly, the crystalline tunnel contact with the 2.0-nm MgO exhibits the Ohmic behavior with the RA products of 5.20 X 10(-6) / 1.04 X 10(-5) Omega m(2) at +/- 0.25 V, satisfying the theoretical conditions required for significant spin injection and detection. We believe that the results are ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3454276] | - |
dc.description.sponsorship | This work was supported by the National Research Laboratory Program Contract No. R0A-2007-000-20026-0, the Global Partnership Program Contract No. K20703001300-09E0100-06910 and and the WCU World Class University Program Contract No. R33-2008-000- 10078-0 through the National Research Foundation of Ko- rea funded by the Ministry of Education, Science and Tech- nology. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SILICON | - |
dc.subject | FUTURE | - |
dc.title | Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection | - |
dc.type | Article | - |
dc.identifier.wosid | 000279999800030 | - |
dc.identifier.scopusid | 2-s2.0-77955148842 | - |
dc.type.rims | ART | - |
dc.citation.volume | 97 | - |
dc.citation.issue | 2 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3454276 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Shin, Sung-Chul | - |
dc.contributor.nonIdAuthor | Min, Byoung-Chul | - |
dc.contributor.nonIdAuthor | Shin, Il-Jae | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | FUTURE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.