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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Materials, Device and Gate Oxide Integrith Evaluation of Simox and Bonded SOI Wafers Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.143 - 145, 1995
2	Integrity of Gate Oxide on TFSOI Materials Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.22 - 23, 1995
3	Transient Behaviors in Partially Depleted Thin Film SOI Devices Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.4 - 6, 1995

Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)

Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.143 - 145, 1995

Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.22 - 23, 1995

Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.4 - 6, 1995

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