RIMS Journal Papers

Recent Items

Collection's Items (Sorted by Submit Date in Descending order): 1501 to 1520 of 4798

1501
Apparent temperature: demystifying the relation between quantum coherence, correlations, and heat flows

Latune, C. L.; Sinayskiy, I; Petruccione, F., QUANTUM SCIENCE AND TECHNOLOGY, v.4, no.2, 2019-04

1502
Microkinetic modeling of aqueous phase biomass conversion:Application to ethylene glycol reforming

Gu, Geun Ho; Wittreich, Gerhard R.; Vlachos, Dionisios G., CHEMICAL ENGINEERING SCIENCE, v.197, pp.415 - 418, 2019-04

1503
Performance Measurements of the SAFIR Prototype Detector With the STiC ASIC Readout

Ahnen, Max; Becker, Robert; Buck, Alfred; Casella, Chiara; Commichau, Volker; di Calafiori, Diogo; Dissertori, Gunther; et al, IEEE TRANSACTIONS ON RADIATION AND PLASMA MEDICAL SCIENCES, v.2, no.3, pp.250 - 258, 2018-05

1504
Network structure reveals patterns of legal complexity in human society: The case of the Constitutional legal network

Lee, Bokwon; Lee, Kyu-Min; Yang, Jae-Suk, PLOS ONE, v.14, no.1, 2019-01

1505
Vibration reduction of the blisk by damping hard coating and its intentional mistuning design

Chen, Yugang; Wu, Hongchun; Zhai, Jingyu; Chen, Hui; Zhu, Qingyu; Han, Qingkai, AEROSPACE SCIENCE AND TECHNOLOGY, v.84, pp.1049 - 1058, 2019-01

1506
Synthesis of Nitriles from Aldehydes with Elongation of the Molecule with Two Carbon Atoms

Afanasyev, Oleg I.; Zarochintsev, Alexander; Petrushina, Tatiana; Cherkasova, Anastasia; Denisov, Gleb; Cherkashchenko, Ilia; Chusova, Olga; et al, EUROPEAN JOURNAL OF ORGANIC CHEMISTRY, no.1, pp.32 - 35, 2019-01

1507
Rechargeable aluminium organic batteries

Kim, Dong Jun; Yoo, Dong-Joo; Otley, Michael T.; Prokofjevs, Aleksandrs; Pezzato, Cristian; Owczarek, Magdalena; Lee, Seung Jong; et al, NATURE ENERGY, v.4, no.1, pp.51 - 59, 2019-01

1508
Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy

Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.4, no.2, 2011-02

1509
Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers

Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.5, no.1, 2012-01

1510
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Suzuki, R.; Taoka, N.; Yokoyama, M.; Lee, S.; Kim, S. H.; Hoshii, T.; Yasuda, T.; et al, APPLIED PHYSICS LETTERS, v.100, no.13, 2012-03

1511
Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, APPLIED PHYSICS LETTERS, v.100, no.19, 2012-05

1512
Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sung-Hoon; Nakane, Ryosho; Urabe, Yuji; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.12, no.4, pp.621 - 628, 2013-07

1513
Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Kim, Sanghyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.8, pp.2512 - 2517, 2013-08

1514
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

Chang, C-Y; Yokoyama, M.; Kim, S-H; Ichikawa, O.; Osada, T.; Hata, M.; Takenaka, M.; et al, MICROELECTRONIC ENGINEERING, v.109, pp.28 - 30, 2013-09

1515
Formation of III-V-on-insulator structures on Si by direct wafer bonding

Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sanghyeon; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.9, 2013-09

1516
Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, APPLIED PHYSICS LETTERS, v.103, no.14, 2013-09

1517
High mobility CMOS technologies using III-V/Ge channels on Si platform

Takagi, S.; Kim, S. -H.; Yokoyama, M.; Zhang, R.; Taoka, N.; Urabe, Y.; Yasuda, T.; et al, SOLID-STATE ELECTRONICS, v.88, pp.2 - 8, 2013-10

1518
Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, JOURNAL OF APPLIED PHYSICS, v.114, no.16, 2013-10

1519
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology

Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.10, pp.3342 - 3350, 2013-10

1520
Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors

Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.13, no.4, pp.456 - 462, 2013-12

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