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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| 50nm MOSFET with Electrically Induced Source/Drain Extensions sangyeon han; sung-il chang; jongho lee; hyungcheol shin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.9, pp.2058 - 2064, 2001-09 | |
| 50-nm MOSFET with Electrically Induced Source/Drain Extensions sangyeon han; sung-il chang; jongho lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.1, pp.39 - 44, 2002-01 | |
| Characteristics of an N2O Radical Oxide Grown by using Electron Cyclotron Resonance Radical Oxidation and Its Application to 50-nm MOSFETs with Floating Polysilicon Spacers sangyeon han; sung-il chang; hyungcheol; jongho lee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.927 - 931, 2002-12 | |
| Lateral Silicon Field-Emission Devices Using Electron Beam Lithography sangyeon han; sun-a yang; taekeun hwang; jongho lee; jong duk lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v.39, no.5A, pp.2556 - 2559, 2000-05 | |
| A 25-nm MOSFET with an Electrically Induced Source/Drain sungil chang; sangyeon han; jongho lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.902 - 906, 2000-12 | |
| A Nano-Structure Memory with SOI Edge Channel and a Nano Dot geunsook park; sangyeon han; taekeun hwang; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.12B, pp.7190 - 7192, 1998-12 | |
| A Nano-structure Memory with SOI Edge Channel and A Nono Dot geunsook park; sangyeon han; hyungcheol shin, 전자공학회논문지, v.35, no.12, pp.48 - 52, 1998-12 | |
| Si Nano-Crystal Memory Cell with Room Temperature Single Electron Effects ilgweon kim; sangyeon han; kwangseok han; jongho lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.2A, pp.447 - 451, 2001-02 |
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