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Results 1-9 of 9 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
50nm MOSFET with Electrically Induced Source/Drain Extensions

sangyeon han; sung-il chang; jongho lee; hyungcheol shin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.9, pp.2058 - 2064, 2001-09

2
50-nm MOSFET with Electrically Induced Source/Drain Extensions

sangyeon han; sung-il chang; jongho lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.1, pp.39 - 44, 2002-01

3
DC and AC Characteristics of sub-50 nm MOSFETs with Source/Drain-to-Gate Non-overlapped Structure

hyunjin lee; jongho lee; hyungcheol shin, NANOTECHNOLOGY, v.1, no.4, pp.219 - 224, 2002

4
Off-state Leakage Currents of MOSFETs with High-k Dielectrics

sungil chang; hyungcheol shin; jongho lee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.932 - 936, 2002-12

5
Characteristics of an N2O Radical Oxide Grown by using Electron Cyclotron Resonance Radical Oxidation and Its Application to 50-nm MOSFETs with Floating Polysilicon Spacers

sangyeon han; sung-il chang; hyungcheol; jongho lee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.927 - 931, 2002-12

6
Lateral Silicon Field-Emission Devices Using Electron Beam Lithography

sangyeon han; sun-a yang; taekeun hwang; jongho lee; jong duk lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v.39, no.5A, pp.2556 - 2559, 2000-05

7
A 25-nm MOSFET with an Electrically Induced Source/Drain

sungil chang; sangyeon han; jongho lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.902 - 906, 2000-12

8
Optimization of Silicon Quantum Dot Fabrication on Oxide and Nitride Films

hyungcheol shin; jongho lee, 전기학회논문지, v.4, no.4, pp.519 - 522, 1999-08

9
Si Nano-Crystal Memory Cell with Room Temperature Single Electron Effects

ilgweon kim; sangyeon han; kwangseok han; jongho lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.2A, pp.447 - 451, 2001-02

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