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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sung-Hoon; Nakane, Ryosho; Urabe, Yuji; Miyata, Noriyuki; Yasuda, Tetsuji; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.12, no.4, pp.621 - 628, 2013-07 | |
| Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; Miyata, Noriyuki; Yasuda, Tetsuji; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS EXPRESS, v.5, no.1, 2012-01 | |
| Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; Miyata, Noriyuki; Yasuda, Tetsuji; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS EXPRESS, v.4, no.2, 2011-02 | |
| Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS LETTERS, v.100, no.19, 2012-05 | |
| Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability Kim, Sanghyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.8, pp.2512 - 2517, 2013-08 | |
| Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, JOURNAL OF APPLIED PHYSICS, v.114, no.16, 2013-10 | |
| High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.10, pp.3342 - 3350, 2013-10 | |
| High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability Kim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.5, pp.1354 - 1360, 2014-05 | |
| Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation Kim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS LETTERS, v.104, no.11, 2014-03 | |
| Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications Kim, Minsoo; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi, THIN SOLID FILMS, v.557, pp.298 - 301, 2014-04 |