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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868, 2018-05 | |
| Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive Bonding Kang, Chang-Mo; Lee, Jun-Yeob; Kong, Duk-Jo; Shim, Jae-Phil; Kim, Sanghyeon; Mun, Seung-Hyun; Choi, Soo-Young; Park, Mun-Do; Kim, James; Lee, Dong-Seon, ACS PHOTONICS, v.5, no.11, pp.4413 - 4422, 2018-11 | |
| Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates Ju, Gunwu; Kim, Hansung; Shim, Jae-Phil; Kim, Seong Kwang; Lee, Byeong-Hyeon; Won, Sung Ok; Kim, Sanghyeon; Kim, Hyung-jun, THIN SOLID FILMS, v.649, pp.38 - 42, 2018-03 | |
| Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.9, pp.3594 - 3601, 2017-09 | |
| A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator Kil, Tae-Hyeon; Kim, Sanghyeon; Jeong, Dae-Han; Geum, Dae-Myeong; Lee, Sooseok; Jung, Sung-Jin; Kim, Sangtae; Park, Chan; Kim, Jin-Sang; Baik, Jeong Min; Lee, Ki-Suk; Kim, Chang Zoo; Choi, Won Jun; Baek, Seung-Hyub, NANO ENERGY, v.37, pp.242 - 247, 2017-07 | |
| Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission Kang, Chang-Mo; Kang, Seok-Jin; Mun, Seung-Hyun; Choi, Soo-Young; Min, Jung-Hong; Kim, Sanghyeon; Shim, Jae-Phil; Lee, Dong-Seon, SCIENTIFIC REPORTS, v.7, 2017-09 | |
| InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off Kim, Hosung; Ahn, Seung-Yeop; Kim, Sanghyeon; Ryu, Geunhwan; Kyhm, Ji Hoon; Lee, Kyung Woon; Park, Jung Ho; Choi, Won Jun, OPTICS EXPRESS, v.25, no.15, pp.17562 - 17570, 2017-07 | |
| Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability Kim, Sanghyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.8, pp.2512 - 2517, 2013-08 | |
| Formation of III-V-on-insulator structures on Si by direct wafer bonding Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sanghyeon; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.9, 2013-09 | |
| Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys Nishi, Koichi; Yokoyama, Masafumi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi, JOURNAL OF APPLIED PHYSICS, v.115, no.3, 2014-01 |