Search
Results 1-10 of 24 (Search time: 0.004 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates Geum, Dae-Myeong; Kim, SangHyeon; Kang, SooSeok; Kim, Hosung; Park, Hwanyeol; Rho, Il Pyo; Ahn, Seung Yeop; Song, Jindong; Choi, Won Jun; Yoon, Euijoon, OPTICS EXPRESS, v.26, no.5, pp.6249 - 6259, 2018-03 | |
| High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer Roh, IlPyo; Kim, SangHyeon; Geum, Dae-Myeong; Lu, Wenjie; Song, YunHeub; del Alamo, Jesus A.; Song, JinDong, APPLIED PHYSICS LETTERS, v.113, no.9, 2018-08 | |
| Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sung-Hoon; Nakane, Ryosho; Urabe, Yuji; Miyata, Noriyuki; Yasuda, Tetsuji; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.12, no.4, pp.621 - 628, 2013-07 | |
| Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; Miyata, Noriyuki; Yasuda, Tetsuji; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS EXPRESS, v.5, no.1, 2012-01 | |
| Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; Miyata, Noriyuki; Yasuda, Tetsuji; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS EXPRESS, v.4, no.2, 2011-02 | |
| Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS LETTERS, v.100, no.19, 2012-05 | |
| Verification of Ge-on-insulator structure for a mid-infrared photonics platform Kim, SangHyeon; Han, Jae-Hoon; Shim, Jae-Phil; Kim, Hyung-Jun; Choi, Won Jun, OPTICAL MATERIALS EXPRESS, v.8, no.2, pp.440 - 451, 2018-02 | |
| Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si Shim, Jae-Phil; Kim, Seong Kwang; Kim, Hansung; Ju, Gunwu; Lim, Heejeong; Kim, SangHyeon; Kim, Hyung-jun, APL MATERIALS, v.6, no.1, 2018-01 | |
| Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, JOURNAL OF APPLIED PHYSICS, v.114, no.16, 2013-10 | |
| High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.10, pp.3342 - 3350, 2013-10 |