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Results 1-9 of 9 (Search time: 0.005 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Formation of Self-aligned Holes in an Arbitrary pattern in Silicon Substrate

H.D.Lee; H.J.Lee; Kim, Choong Ki; C.H.Han, APPLIED PHYSICS LETTERS, v.66, no.24, pp.3272 - 3274, 1995-06

2
Application of Electron-Cyclotron-Resonance Plasma Thermal-Oxidation to Bottom Gate Polysilicon Thin-Film Transistors

j.i. han; Kim, Choong Ki; c.h. han, JAPANESE JOURNAL OF APPLIED PHYSICS, v.35, no.2B, pp.930 - 933, 1996-02

3
A thermal inkjet printhead with a monolithically fabricated nozzle plate and self-aligned ink feed hole

Lee, JD; Yoon, Jun-Bo; Kim, JK; Chung, HJ; Lee, CS; Lee, HD; Lee, HJ; Kim, Choong Ki; Han, CH, JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, v.8, no.3, pp.229 - 236, 1999-09

4
SUPPRESSION OF LEAKAGE CURRENT IN N-CHANNEL POLYSILICON THIN-FILM TRANSISTORS USING NH3 ANNEALING

CHOI, DS; HUR, SH; YANG, GY; Han, Chul-Hi; Kim, Choong Ki, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.2B, pp.882 - 885, 1995-02

5
Direct Growing of Lightly Doped Epitaxial Silicon without Misfit Dislocation on Heavily Boron-Doped Silicon Layer

H.J.Lee; C.S.Kim; C.H.Han; Kim, Choong Ki, APPLIED PHYSICS LETTERS, v.65, no.17, pp.2139 - 2141, 1994-10

6
FEASIBILITY OF SUBSTRATE FED THRESHOLD LOGIC

Han, Chul-Hi; Kim, Choong Ki; YOO, GH, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.18, no.2, pp.160 - 164, 1983-04

7
Heavily Boron-Doped Silicon Membranes with Enhanced Mechanical Properties for X-Ray Mask Substrates

H.J.Lee; C.H.Han; Kim, Choong Ki, APPLIED PHYSICS LETTERS, v.65, no.11, pp.1385 - 1387, 1994-09

8
High Performance Low Temperature Polysilicon Thin Film Transistor Using ECR Plasma Thermal Oxide as Gate Insulator

J.Y.Lee; C.H.Han; Kim, Choong Ki, IEEE ELECTRON DEVICE LETTERS, v.15, no.8, pp.301 - 303, 1994-08

9
Stability of N-Channel Polysilicon Thin-Film Transistors with ECR Plasma Thermal Gate Oxide

j.y. lee; c.h. han; Kim, Choong Ki, IEEE ELECTRON DEVICE LETTERS, v.17, no.4, pp.169 - 171, 1996-04

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