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Results 1-10 of 15 (Search time: 0.006 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| SUPPRESSION OF LEAKAGE CURRENT IN N-CHANNEL POLYSILICON THIN-FILM TRANSISTORS USING NH3 ANNEALING CHOI, DS; HUR, SH; YANG, GY; Han, Chul-Hi; Kim, Choong Ki, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.2B, pp.882 - 885, 1995-02 | |
| Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma Lee, JW; Lee, NI; Han, JI; Han, Chul-Hi, IEEE ELECTRON DEVICE LETTERS, v.18, no.5, pp.172 - 174, 1997-05 | |
| A physical-based analytical turn-on model of polysilicon thin-film transistors for circuit simulation Yang, GY; Hur, SH; Han, Chul-Hi, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.46, no.1, pp.165 - 172, 1999-01 | |
| EFFECTS OF ELECTRON-CYCLOTRON-RESONANCE PLASMA THERMAL-OXIDATION ON THE PROPERTIES OF POLYCRYSTALLINE SILICON FILM LEE, JY; Han, Chul-Hi; KIM, CK; KIM, BK, APPLIED PHYSICS LETTERS, v.67, no.13, pp.1880 - 1882, 1995-09 | |
| FEASIBILITY OF SUBSTRATE FED THRESHOLD LOGIC Han, Chul-Hi; Kim, Choong Ki; YOO, GH, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.18, no.2, pp.160 - 164, 1983-04 | |
| A new wide-dimensional freestanding microstructure fabrication technology using laterally formed porous silicon as a sacrificial layer Lee, CS; Lee, JD; Han, Chul-Hi, SENSORS AND ACTUATORS A-PHYSICAL, v.84, no.1-2, pp.181 - 185, 2000-08 | |
| A New Lateral Field Emission Device Using Chemical-Mechanical Polishing c.-s. lee; j.-d. lee; Han, Chul-Hi, IEEE ELECTRON DEVICE LETTERS, v.21, no.10, pp.479 - 481, 2000-10 | |
| Nonvolatile SRAM cell using different capacitance loading sung-hoi hur; Han, Chul-Hi, ELECTRONICS LETTERS, v.34, no.3, pp.251 - 253, 1998-02 | |
| Low temperature copper etching using an inductively coupled plasma with ultraviolet light irradiation Choi, KS; Han, Chul-Hi, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.145, no.3, pp.37 - 39, 1998-03 | |
| Endurance characteristics and degradation mechanism of polysilicon thin film transistor EEPROMs with electron cyclotron resonance NaO-plasma gate oxide Lee, NI; Lee, JW; Han, Chul-Hi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.4B, pp.2215 - 2218, 1999-04 |
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