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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates Geum, Dae-Myeong; Kim, SangHyeon; Kang, SooSeok; Kim, Hosung; Park, Hwanyeol; Rho, Il Pyo; Ahn, Seung Yeop; Song, Jindong; Choi, Won Jun; Yoon, Euijoon, OPTICS EXPRESS, v.26, no.5, pp.6249 - 6259, 2018-03 | |
| Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868, 2018-05 | |
| Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials Kim, Sang-Hyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Ju, Gunwu; Kim, Han-Sung; Lim, Hee-Jeong; Lim, Hyeong-Rak; Han, Jae-Hoon; Lee, Subin; Kim, Ho-Sung; Bidenko, Pavlo; Kang, Chang-Mo; Lee, Dong-Seon; Song, Jin-Dong; Choi, Won Jun; Kim, Hyung-Jun, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.6, no.1, pp.579 - 587, 2018 | |
| Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.9, pp.3594 - 3601, 2017-09 | |
| A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator Kil, Tae-Hyeon; Kim, Sanghyeon; Jeong, Dae-Han; Geum, Dae-Myeong; Lee, Sooseok; Jung, Sung-Jin; Kim, Sangtae; Park, Chan; Kim, Jin-Sang; Baik, Jeong Min; Lee, Ki-Suk; Kim, Chang Zoo; Choi, Won Jun; Baek, Seung-Hyub, NANO ENERGY, v.37, pp.242 - 247, 2017-07 | |
| InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off Kim, Hosung; Ahn, Seung-Yeop; Kim, Sanghyeon; Ryu, Geunhwan; Kyhm, Ji Hoon; Lee, Kyung Woon; Park, Jung Ho; Choi, Won Jun, OPTICS EXPRESS, v.25, no.15, pp.17562 - 17570, 2017-07 | |
| Verification of Ge-on-insulator structure for a mid-infrared photonics platform Kim, SangHyeon; Han, Jae-Hoon; Shim, Jae-Phil; Kim, Hyung-Jun; Choi, Won Jun, OPTICAL MATERIALS EXPRESS, v.8, no.2, pp.440 - 451, 2018-02 | |
| Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun, SCIENTIFIC REPORTS, v.6, 2016-02 | |
| Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance Lee, Hye Jin; Lee, Jae Won; Kim, Hee Jun; Jung, Dae-Han; Lee, Ki-Suk; Kim, Sang Hyeon; Geum, Dae-myeong; Kim, Chang Zoo; Choi, Won Jun; Baik, Jeong Min, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.18, no.4, pp.2906 - 2912, 2016-01 | |
| Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs Kim, Seong Kwang; Lee, Jungmin; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong, SOLID-STATE ELECTRONICS, v.122, pp.8 - 12, 2016-08 |
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