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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Top-Down Processed Silicon Nanowires for Thermoelectric Applications Jang, Moongyu; Park, Youngsam; Hyun, Younghoon; Jun, Myungsim; Choi, Sung-Jin; Zyung, Taehyung; Kim, Jong-Dae, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.4, pp.3552 - 3554, 2012-04 | |
| Highly uniform carbon nanotube nanomesh network transistors Choi, Sung-Jin; Bennett, Patrick; Lee, Dongil; Bokor, Jeffrey, NANO RESEARCH, v.8, no.4, pp.1320 - 1326, 2015-04 | |
| Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868, 2018-05 | |
| Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.9, pp.3594 - 3601, 2017-09 | |
| Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs Kim, Seong Kwang; Lee, Jungmin; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong, SOLID-STATE ELECTRONICS, v.122, pp.8 - 12, 2016-08 | |
| Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density Kim, Seong Kwang; Geum, Dae-Myeong; Shim, Jae-Phil; Kim, Chang Zoo; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong, APPLIED PHYSICS LETTERS, v.110, no.4, 2017-01 | |
| Study on the Photoresponse of Amorphous In-Ga-Zn-O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan, ACS APPLIED MATERIALS & INTERFACES, v.7, no.28, pp.15570 - 15577, 2015-07 | |
| Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan, APPLIED PHYSICS LETTERS, v.106, no.12, 2015-03 | |
| The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In-Ga-Zn-O Thin Film Transistors Under Current Stress Choi, Sungju; Kim, Hyeongjung; Jo, Chunhyung; Kim, Hyun-Suk; Choi, Sung-Jin; Kim, Dong Myong; Park, Jozeph; Kim, Dae Hwan, IEEE ELECTRON DEVICE LETTERS, v.36, no.12, pp.1336 - 1339, 2015-12 | |
| A Study on the Degradation of In-Ga-Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution Choi, Sungju; Kim, Hyeongjung; Jo, Chunhyung; Kim, Hyun-Suk; Choi, Sung-Jin; Kim, Dong Myong; Park, Jozeph; Kim, Dae Hwan, IEEE ELECTRON DEVICE LETTERS, v.36, no.7, pp.690 - 692, 2015-07 |
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