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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio Jeong J.-H.; Lee H.S.; Lee S.; Lee T.S.; Kim W.M.; Zhe W.; Kim S.C.; Oh K.H.; Cheong B.-K., JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3, 2009
2	Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe Lee S.; Jeong J.-H.; Wu Z.; Park Y.-W.; Kim W.M.; Cheong B.-K., JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.7, pp.H612 - H615, 2009
3	A study on the temperature dependence of characteristics of phase change memory devices Lee S.; Jeong D.S.; Jeong J.-H.; Zhe W.; Park Y.-W.; Ahn H.-W.; Kim W.M.; Cheong B.-K., APPLIED PHYSICS LETTERS, v.95, no.9, 2009

Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)

Jeong J.-H.; Lee H.S.; Lee S.; Lee T.S.; Kim W.M.; Zhe W.; Kim S.C.; Oh K.H.; Cheong B.-K., JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3, 2009

Lee S.; Jeong J.-H.; Wu Z.; Park Y.-W.; Kim W.M.; Cheong B.-K., JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.7, pp.H612 - H615, 2009

Lee S.; Jeong D.S.; Jeong J.-H.; Zhe W.; Park Y.-W.; Ahn H.-W.; Kim W.M.; Cheong B.-K., APPLIED PHYSICS LETTERS, v.95, no.9, 2009

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