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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio Jeong J.-H.; Lee H.S.; Lee S.; Lee T.S.; Kim W.M.; Zhe W.; Kim S.C.; Oh K.H.; Cheong B.-K., JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3, 2009 |
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