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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe Lee S.; Jeong J.-H.; Wu Z.; Park Y.-W.; Kim W.M.; Cheong B.-K., JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.7, pp.H612 - H615, 2009 |