Browse "RIMS Journal Papers" by Subject DRAM
Showing results 1 to 4 of 4
| A 500-Mb/a quadruple data rate SDRAM interface using a skew cancellation technique Wang, SH; Kim, J; Lee, J; Nam, HS; Kim, YG; Shim, JH; Ahn, HK; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.36, no.4, pp.648 - 657, 2001-04 |
| A NOVEL LOCAL OXIDATION OF SILICON (LOCOS)-TYPE ISOLATION TECHNOLOGY FREE OF THE FIELD OXIDE THINNING EFFECT PARK, TS; AHN, SJ; AHN, ST, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.435 - 439, 1994-01 |
| The Cross-industry Spillover of Technological Capability: Koreas DRAM and TFT-LCD Industries Park, Tae-Young; Choung, JaeYong; Min, Hong Ghi, WORLD DEVELOPMENT, v.36, pp.2855 - 2873, 2008-12 |
| The effects of substrate temperature and lead precursor flow rate on the fabrication of (Pb,La)(Zr,Ti)O-3 thin films by electron cyclotron resonance plasma-enhanced chemical vapor deposition Shin, JS; Chun , Soung Soon; Lee, Won-Jong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.4A, pp.2200 - 2206, 1997-04 |
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