Browse "RIMS Journal Papers" by Subject ANNEALING
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| EFFECTS OF ANNEALING CONDITIONS ON THE PROPERTIES OF TANTALUM OXIDE-FILMS ON SILICON SUBSTRATES PARK, SW; BAEK, YK; Park, Chong-Ook; PARK, CO; Lim, Ho Bin, JOURNAL OF ELECTRONIC MATERIALS, v.21, no.6, pp.635 - 639, 1992-06 |
| EFFECTS OF ANNEALING IN O-2 AND N-2 ON THE ELECTRICAL-PROPERTIES OF TANTALUM OXIDE THIN-FILMS PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION Kim, IL; Kim, Jong-Seok; Kwon, Oh-Seung; Ahn, Sung-Tae; Chun , Soung Soon; Lee, Won-Jong, JOURNAL OF ELECTRONIC MATERIALS, v.24, no.10, pp.1435 - 1441, 1995-10 |
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