Browse "RIMS Journal Papers" by Author Zhang, R.
Showing results 1 to 2 of 2
| High mobility CMOS technologies using III-V/Ge channels on Si platform Takagi, S.; Kim, S. -H.; Yokoyama, M.; Zhang, R.; Taoka, N.; Urabe, Y.; Yasuda, T.; et al, SOLID-STATE ELECTRONICS, v.88, pp.2 - 8, 2013-10 |
| III-V/Ge MOS device technologies for low power integrated systems Takagi, S.; Noguchi, M.; Kim, M.; Kim, S. -H.; Chang, C. -Y.; Yokoyama, M.; Nishi, K.; et al, SOLID-STATE ELECTRONICS, v.125, pp.82 - 102, 2016-11 |
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