DC Field | Value | Language |
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dc.contributor.author | Ryu, Min Ki | ko |
dc.contributor.author | Yang, Shinhyuk | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Jeong, Jae Kyeong | ko |
dc.date.accessioned | 2015-11-20T12:54:01Z | - |
dc.date.available | 2015-11-20T12:54:01Z | - |
dc.date.created | 2014-04-21 | - |
dc.date.created | 2014-04-21 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.95, no.7 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201761 | - |
dc.description.abstract | Thin film transistors with a channel of Zn-In-Sn-O were fabricated via a combinatorial rf sputtering method. It was found that the role of the In atoms is to enhance the mobility and to shift the threshold voltage (V-th) negatively. On the other hand, the Sn fraction is critical for improving the overall trap density including the density-of-states of the bulk channel layer and the interfacial trap density at the ZnInSnO interface. The optimized transistor was obtained at a compositional ratio of Zn:In:Sn=40:20:40, which exhibited an excellent subthreshold gate swing of 0.12 V/decade, V-th of -0.4 V, and high I-on/off ratio of >10(9) as well as a high field-effect mobility of 24.6 cm(2)/V s. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | OXIDE SEMICONDUCTORS | - |
dc.subject | CARRIER TRANSPORT | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.title | High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach | - |
dc.type | Article | - |
dc.identifier.wosid | 000269288300029 | - |
dc.identifier.scopusid | 2-s2.0-69249184461 | - |
dc.type.rims | ART | - |
dc.citation.volume | 95 | - |
dc.citation.issue | 7 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3206948 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Ryu, Min Ki | - |
dc.contributor.nonIdAuthor | Yang, Shinhyuk | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.contributor.nonIdAuthor | Jeong, Jae Kyeong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | field effect transistors | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | interface states | - |
dc.subject.keywordAuthor | sputter deposition | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | tin compounds | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTORS | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
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