DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheong, Woo-Seok | ko |
dc.contributor.author | Lee, Jeong-Min | ko |
dc.contributor.author | Yoon, Sung Min | ko |
dc.contributor.author | Lee, Jong-Ho | ko |
dc.contributor.author | Yang, Shinhyuk | ko |
dc.contributor.author | Chung, Sung Mook | ko |
dc.contributor.author | Cho, Kyoung Ik | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Byun, Chun-Won | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.date.accessioned | 2015-11-20T12:52:44Z | - |
dc.date.available | 2015-11-20T12:52:44Z | - |
dc.date.created | 2014-04-18 | - |
dc.date.created | 2014-04-18 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.citation | ETRI JOURNAL, v.31, no.6, pp.660 - 666 | - |
dc.identifier.issn | 1225-6463 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201749 | - |
dc.description.abstract | We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200 degrees C, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as Si3N4 and Al2O3, the electrical properties are analyzed. After post-annealing at 200 degrees C for 1 hour in an O-2 ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a Si3N4 IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of I-d = 3 mu A, an IGZO-TFT with heat-treated Si3N4 IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior. | - |
dc.language | English | - |
dc.publisher | ELECTRONICS TELECOMMUNICATIONS RESEARCH INST | - |
dc.subject | SEMICONDUCTORS | - |
dc.title | Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000272825200006 | - |
dc.identifier.scopusid | 2-s2.0-73449139107 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 660 | - |
dc.citation.endingpage | 666 | - |
dc.citation.publicationname | ETRI JOURNAL | - |
dc.identifier.doi | 10.4218/etrij.09.1209.0049 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Cheong, Woo-Seok | - |
dc.contributor.nonIdAuthor | Lee, Jeong-Min | - |
dc.contributor.nonIdAuthor | Yoon, Sung Min | - |
dc.contributor.nonIdAuthor | Lee, Jong-Ho | - |
dc.contributor.nonIdAuthor | Yang, Shinhyuk | - |
dc.contributor.nonIdAuthor | Chung, Sung Mook | - |
dc.contributor.nonIdAuthor | Cho, Kyoung Ik | - |
dc.contributor.nonIdAuthor | Byun, Chun-Won | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | interfacial dielectric layer | - |
dc.subject.keywordAuthor | electrical stability | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
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