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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Thin-film transistors based on p-type Cu2O thin films produced at room temperature

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dc.contributor.authorFortunato, Elvirako
dc.contributor.authorFigueiredo, Vitorko
dc.contributor.authorBarquinha, Pedroko
dc.contributor.authorElamurugu, Elangovanko
dc.contributor.authorBarros, Raquelko
dc.contributor.authorGoncalves, Goncaloko
dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorHwang, Chi-Sunko
dc.contributor.authorMartins, Rodrigoko
dc.date.accessioned2015-11-20T12:50:42Z-
dc.date.available2015-11-20T12:50:42Z-
dc.date.created2014-04-17-
dc.date.created2014-04-17-
dc.date.issued2010-05-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.96, no.19-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/201729-
dc.description.abstractCopper oxide (Cu2O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm(2)/V s and an on/off ratio of 2 x 10(2). (C) 2010 American Institute of Physics. [doi:10.1063/1.3428434]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectBARRIER SOLAR-CELLS-
dc.subjectELECTRICAL-CONDUCTIVITY-
dc.subjectCOPPER-OXIDE-
dc.subjectDEPOSITION-
dc.subjectDEFECTS-
dc.titleThin-film transistors based on p-type Cu2O thin films produced at room temperature-
dc.typeArticle-
dc.identifier.wosid000277756400026-
dc.type.rimsART-
dc.citation.volume96-
dc.citation.issue19-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.3428434-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorFortunato, Elvira-
dc.contributor.nonIdAuthorFigueiredo, Vitor-
dc.contributor.nonIdAuthorBarquinha, Pedro-
dc.contributor.nonIdAuthorElamurugu, Elangovan-
dc.contributor.nonIdAuthorBarros, Raquel-
dc.contributor.nonIdAuthorGoncalves, Goncalo-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
dc.contributor.nonIdAuthorMartins, Rodrigo-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcarrier mobility-
dc.subject.keywordAuthorcopper compounds-
dc.subject.keywordAuthorcrystal structure-
dc.subject.keywordAuthorfield effect transistors-
dc.subject.keywordAuthorsemiconductor thin films-
dc.subject.keywordAuthorsputter deposition-
dc.subject.keywordAuthorthin film transistors-
dc.subject.keywordAuthortransparency-
dc.subject.keywordPlusBARRIER SOLAR-CELLS-
dc.subject.keywordPlusELECTRICAL-CONDUCTIVITY-
dc.subject.keywordPlusCOPPER-OXIDE-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusDEFECTS-
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