DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Sung-Min | ko |
dc.contributor.author | Yang, Shin-Hyuk | ko |
dc.contributor.author | Jung, Soon-Won | ko |
dc.contributor.author | Byun, Chun-Won | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Lee, Gwang-Geun | ko |
dc.contributor.author | Tokumitsu, Eisuke | ko |
dc.contributor.author | Ishiwara, Hiroshi | ko |
dc.date.accessioned | 2015-11-20T12:50:03Z | - |
dc.date.available | 2015-11-20T12:50:03Z | - |
dc.date.created | 2014-04-17 | - |
dc.date.created | 2014-04-17 | - |
dc.date.issued | 2010-06 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.96, no.23 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201723 | - |
dc.description.abstract | We characterized the nonvolatile memory thin-film transistors, which was composed of an amorphous indium-gallium-zinc oxide (alpha-IGZO) active channel and a ferroelectric poly (vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator, and investigated the impact of an interface controlling layer. Excellent device performances, such as the field-effect mobility of 60.9 cm(2) V-1 s(-1), the subthreshold swing of 120 mV/dec, and the memory window of 6.4 V at +/- 12 V programming, were confirmed for the device without any interface layer. However, the memory retention time was very short. The retention behaviors could be dramatically improved when 4 nm thick Al2O3 layer was introduced between the P(VDF-TrFE) and alpha-IGZO. (C) 2010 American Institute of Physics. [doi:10.1063/1.3452339] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.title | Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000278695900054 | - |
dc.identifier.scopusid | 2-s2.0-77953515752 | - |
dc.type.rims | ART | - |
dc.citation.volume | 96 | - |
dc.citation.issue | 23 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3452339 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Yoon, Sung-Min | - |
dc.contributor.nonIdAuthor | Yang, Shin-Hyuk | - |
dc.contributor.nonIdAuthor | Jung, Soon-Won | - |
dc.contributor.nonIdAuthor | Byun, Chun-Won | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.contributor.nonIdAuthor | Lee, Gwang-Geun | - |
dc.contributor.nonIdAuthor | Tokumitsu, Eisuke | - |
dc.contributor.nonIdAuthor | Ishiwara, Hiroshi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
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