DC Field | Value | Language |
---|---|---|
dc.contributor.author | Long, R. D. | ko |
dc.contributor.author | Shin, B. | ko |
dc.contributor.author | Monaghan, S. | ko |
dc.contributor.author | Cherkaoui, K. | ko |
dc.contributor.author | Cagnon, J. | ko |
dc.contributor.author | Stemmer, S. | ko |
dc.contributor.author | McIntyre, P. C. | ko |
dc.date.accessioned | 2015-11-20T12:47:55Z | - |
dc.date.available | 2015-11-20T12:47:55Z | - |
dc.date.created | 2014-03-13 | - |
dc.date.created | 2014-03-13 | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.5, pp.103 - 107 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201703 | - |
dc.description.abstract | This work focuses on the separation and quantification of fixed bulk oxide charge, fixed charge at the dielectric-semiconductor interface and interface state charge components in the Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) system. The availability of atomic layer deposited Al2O3 dielectrics over n- and p-type In0.53Ga0.47As with a range of well-controlled thickness values opens up an experimental route for the determination of the interface state density (D-it) independently of the total fixed oxide charge using capacitance-voltage measurements taken at 1 MHz and -50 degrees C. Low temperature forming gas annealing (350 degrees C) significantly reduces the amount of fixed charge. The interface fixed charge is reduced from similar to -8.5 x 10(12) cm(-2) preanneal to similar to 7.4 x 10(11) cm(-2) postanneal and the bulk oxide charge is reduced from similar to 1.4 x 10(19) cm(-3) preanneal to similar to 5 x 10(18) cm(-3) postanneal. The forming gas anneal also has a significant effect on the interface state charge, reducing its density from 1.3 x 10(13) cm(-2) preanneal to 4 x 10(12) cm(-2) postanneal. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3545799] All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | ATOMIC-LAYER DEPOSITION | - |
dc.subject | AL2O3 | - |
dc.title | Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors | - |
dc.type | Article | - |
dc.identifier.wosid | 000288867700071 | - |
dc.identifier.scopusid | 2-s2.0-79953199803 | - |
dc.type.rims | ART | - |
dc.citation.volume | 158 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 103 | - |
dc.citation.endingpage | 107 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.3545799 | - |
dc.contributor.localauthor | Shin, B. | - |
dc.contributor.nonIdAuthor | Long, R. D. | - |
dc.contributor.nonIdAuthor | Monaghan, S. | - |
dc.contributor.nonIdAuthor | Cherkaoui, K. | - |
dc.contributor.nonIdAuthor | Cagnon, J. | - |
dc.contributor.nonIdAuthor | Stemmer, S. | - |
dc.contributor.nonIdAuthor | McIntyre, P. C. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ATOMIC-LAYER DEPOSITION | - |
dc.subject.keywordPlus | AL2O3 | - |
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