DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bentley, Steven J. | ko |
dc.contributor.author | Holland, Martin | ko |
dc.contributor.author | Li, Xu | ko |
dc.contributor.author | Paterson, Gary W. | ko |
dc.contributor.author | Zhou, HP | ko |
dc.contributor.author | Ignatova, Olesya | ko |
dc.contributor.author | Thoms, Stephen | ko |
dc.contributor.author | Asenov, Asen | ko |
dc.contributor.author | Shin, Byungha | ko |
dc.contributor.author | Ahn, Jaesoo | ko |
dc.contributor.author | McIntyre, Paul C. | ko |
dc.contributor.author | Thayne, Iain G. | ko |
dc.date.accessioned | 2015-11-20T12:46:31Z | - |
dc.date.available | 2015-11-20T12:46:31Z | - |
dc.date.created | 2014-03-13 | - |
dc.date.created | 2014-03-13 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201690 | - |
dc.description.abstract | In this letter, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface- and buried-channel In0.53Ga0.47 As devices employing an atomic-layer-deposited Al2O3 gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure. Peak electron mobilities of 4300 cm(2)/V . s and 6600 cm(2)/V . s at a carrier density of 3 x 10(12) cm(-2) were determined for the surface-and buried-channel structures, respectively. In contrast to similarly scaled inversion-channel devices, we find that the mobility in surface-channel flatband structures does not drop rapidly with the electron density, but rather high mobility is maintained up to carrier concentrations around 4 x 10(12) cm(-2) before slowly dropping to around 2000 cm(2)/V . s at 1 x 10(13) cm(-2). We believe these to be world leading metrics for this material system and an important development in informing the III-V MOSFET device architecture selection process for the future low-power highly scaled CMOS. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric | - |
dc.type | Article | - |
dc.identifier.wosid | 000288664800022 | - |
dc.identifier.scopusid | 2-s2.0-79953064474 | - |
dc.type.rims | ART | - |
dc.citation.volume | 32 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 494 | - |
dc.citation.endingpage | 496 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2011.2107876 | - |
dc.contributor.localauthor | Shin, Byungha | - |
dc.contributor.nonIdAuthor | Bentley, Steven J. | - |
dc.contributor.nonIdAuthor | Holland, Martin | - |
dc.contributor.nonIdAuthor | Li, Xu | - |
dc.contributor.nonIdAuthor | Paterson, Gary W. | - |
dc.contributor.nonIdAuthor | Zhou, HP | - |
dc.contributor.nonIdAuthor | Ignatova, Olesya | - |
dc.contributor.nonIdAuthor | Thoms, Stephen | - |
dc.contributor.nonIdAuthor | Asenov, Asen | - |
dc.contributor.nonIdAuthor | Ahn, Jaesoo | - |
dc.contributor.nonIdAuthor | McIntyre, Paul C. | - |
dc.contributor.nonIdAuthor | Thayne, Iain G. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Atomic layer deposition (ALD) | - |
dc.subject.keywordAuthor | electron mobility | - |
dc.subject.keywordAuthor | InGaAs | - |
dc.subject.keywordAuthor | MOSFET | - |
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