DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bak, Jun Yong | ko |
dc.contributor.author | Yoon, Sung Min | ko |
dc.contributor.author | Yang, Shinhyuk | ko |
dc.contributor.author | Kim, Gi Heon | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.date.accessioned | 2015-11-20T12:42:53Z | - |
dc.date.available | 2015-11-20T12:42:53Z | - |
dc.date.created | 2014-04-16 | - |
dc.date.created | 2014-04-16 | - |
dc.date.created | 2014-04-16 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.4 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201656 | - |
dc.description.abstract | In-Ga-Zn-O (IGZO)-channel oxide thin-film transistors (TFTs) were fabricated on flexible polyethylene naphthalate (PEN) substrates. A lamination and delamination procedure was established that allowed easy handling of the PEN substrate during fabrication. In order to fabricate high-performance flexible IGZO TFTs at lower than normal process temperatures, a 2:1:2 (In:Ga:Zn) IGZO channel composition was proposed. The field-effect mobility, threshold voltage, and subthreshold swing of the fabricated IGZO TFTs were found to be approximately 7.83 cm(2) V-1 s(-1), 1.93 V, and 0.24 V/decade, respectively, even when a final heat treatment was conducted at a temperature as low as 150 degrees C. The stability characteristics of the devices were also examined under gate bias stress and constant current stress conditions. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4731257] | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000306750700024 | - |
dc.identifier.scopusid | 2-s2.0-84864240204 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.issue | 4 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.identifier.doi | 10.1116/1.4731257 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Bak, Jun Yong | - |
dc.contributor.nonIdAuthor | Yoon, Sung Min | - |
dc.contributor.nonIdAuthor | Yang, Shinhyuk | - |
dc.contributor.nonIdAuthor | Kim, Gi Heon | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.type.journalArticle | Article | - |
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