Complete gate control of supercurrent in graphene p-n junctions

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dc.contributor.authorChoi, Jae-Hyunko
dc.contributor.authorLee, Gil-Hoko
dc.contributor.authorPark, Sunghunko
dc.contributor.authorJeong, Dongchanko
dc.contributor.authorLee, Jeong-Oko
dc.contributor.authorSim, Heung-Sunko
dc.contributor.authorDoh, Yong-Jooko
dc.contributor.authorLee, Hu-Jongko
dc.date.accessioned2015-11-20T12:34:25Z-
dc.date.available2015-11-20T12:34:25Z-
dc.date.created2013-11-09-
dc.date.created2013-11-09-
dc.date.created2013-11-09-
dc.date.created2013-11-09-
dc.date.issued2013-09-
dc.identifier.citationNATURE COMMUNICATIONS, v.4-
dc.identifier.issn2041-1723-
dc.identifier.urihttp://hdl.handle.net/10203/201559-
dc.description.abstractIn a conventional Josephson junction of graphene, the supercurrent is not turned off even at the charge neutrality point, impeding further development of superconducting quantum information devices based on graphene. Here we fabricate bipolar Josephson junctions of graphene, in which a p-n potential barrier is formed in graphene with two closely spaced superconducting contacts, and realize supercurrent ON/OFF states using electrostatic gating only. The bipolar Josephson junctions of graphene also show fully gate-driven macroscopic quantum tunnelling behaviour of Josephson phase particles in a potential well, where the confinement energy is gate tuneable. We suggest that the supercurrent OFF state is mainly caused by a supercurrent dephasing mechanism due to a random pseudomagnetic field generated by ripples in graphene, in sharp contrast to other nanohybrid Josephson junctions. Our study may pave the way for the development of new gate-tuneable superconducting quantum information devices.-
dc.languageEnglish-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleComplete gate control of supercurrent in graphene p-n junctions-
dc.typeArticle-
dc.identifier.wosid000325536300001-
dc.identifier.scopusid2-s2.0-84884951308-
dc.type.rimsART-
dc.citation.volume4-
dc.citation.publicationnameNATURE COMMUNICATIONS-
dc.identifier.doi10.1038/ncomms3525-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorSim, Heung-Sun-
dc.contributor.nonIdAuthorChoi, Jae-Hyun-
dc.contributor.nonIdAuthorLee, Gil-Ho-
dc.contributor.nonIdAuthorPark, Sunghun-
dc.contributor.nonIdAuthorJeong, Dongchan-
dc.contributor.nonIdAuthorLee, Jeong-O-
dc.contributor.nonIdAuthorDoh, Yong-Joo-
dc.contributor.nonIdAuthorLee, Hu-Jong-
dc.description.isOpenAccessY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusZERO-VOLTAGE STATE-
dc.subject.keywordPlusJOSEPHSON-JUNCTIONS-
dc.subject.keywordPlusPHASE-
dc.subject.keywordPlusZERO-VOLTAGE STATE-
dc.subject.keywordPlusJOSEPHSON-JUNCTIONS-
dc.subject.keywordPlusPHASE-
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