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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Trap States of the Oxide Thin Film Transistor

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dc.contributor.authorYu, Kyeong Minko
dc.contributor.authorYuh, Jin Taeko
dc.contributor.authorPark, Sang Hee Koko
dc.contributor.authorRyu, Min Kiko
dc.contributor.authorYun, Eui Jungko
dc.contributor.authorBae, Byung Seongko
dc.date.accessioned2015-11-20T12:30:28Z-
dc.date.available2015-11-20T12:30:28Z-
dc.date.created2014-04-15-
dc.date.created2014-04-15-
dc.date.created2014-04-15-
dc.date.issued2013-10-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.10-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/201513-
dc.description.abstractWe investigated the temperature dependent recovery of the threshold voltage shift observed in both ZnO and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) after application of gate bias and light illumination. Two types of recovery were observed for both the ZnO and IGZO TFTs; low temperature recovery (below 110 degrees C) which is attributed to the trapped charge and high temperature recovery (over 110 degrees C) which is related to the annihilation of trap states generated during stresses. From a comparison study of the recovery rate with the analysis of hydrogen diffusion isochronal annealing, a similar behavior was observed for both TFT recovery and hydrogen diffusion. This result suggests that hydrogen plays an important role in the generation and annihilation of trap states in oxide TFTs under gate bias or light illumination stresses. (C) 2013 The Japan Society of Applied Physics-
dc.languageEnglish-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.subjectBIAS STABILITY-
dc.subjectZNO-
dc.subjectLIGHT-
dc.titleTrap States of the Oxide Thin Film Transistor-
dc.typeArticle-
dc.identifier.wosid000325946500012-
dc.identifier.scopusid2-s2.0-84887038937-
dc.type.rimsART-
dc.citation.volume52-
dc.citation.issue10-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.7567/JJAP.52.10MA12-
dc.contributor.localauthorPark, Sang Hee Ko-
dc.contributor.nonIdAuthorYu, Kyeong Min-
dc.contributor.nonIdAuthorYuh, Jin Tae-
dc.contributor.nonIdAuthorRyu, Min Ki-
dc.contributor.nonIdAuthorYun, Eui Jung-
dc.contributor.nonIdAuthorBae, Byung Seong-
dc.type.journalArticleArticle-
dc.subject.keywordPlusBIAS STABILITY-
dc.subject.keywordPlusZNO-
dc.subject.keywordPlusLIGHT-
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