DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ofuonye, Benedict | ko |
dc.contributor.author | Lee, Jaseun | ko |
dc.contributor.author | Yan, Minjun | ko |
dc.contributor.author | Sun, Chang Woo | ko |
dc.contributor.author | Zuo, Jian-Min | ko |
dc.contributor.author | Adesida, Ilesanmi | ko |
dc.date.accessioned | 2015-11-20T10:14:42Z | - |
dc.date.available | 2015-11-20T10:14:42Z | - |
dc.date.created | 2014-09-30 | - |
dc.date.created | 2014-09-30 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.29, no.9 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201210 | - |
dc.description.abstract | High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN heterostructures under thermal annealing. As-deposited Ni/Pt/Au had slightly higher Schottky barrier height than its Ni/Au counterpart. Schottky barrier heights for Ni/Au diodes on AlGaN/GaN increased by about 20% from 1.02 eV for as-deposited to 1.21 eV after annealing at 500 degrees C for 2 min. Similar trends were observed for Ni/Pt/Au Schottky diodes. Thermal stability study for these devices showed that the interposition of Pt in Ni/Au systems improved the characteristics of the Schottky diodes after short-term anneal but cause significant degradation after long-term anneal at 500 degrees C. Ni/Au Schottky contacts exhibited excellent leakage response under thermal annealing for long periods. Microstructural studies were carried out on Ni/Pt/Au and Ni/Au Schottky contacts to elucidate the role of the Pt interlayer in the degradation of the Ni/Pt/Au metallization under long-term thermal anneal. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | N-TYPE GAN | - |
dc.subject | BARRIER HEIGHT | - |
dc.subject | GAN/ALGAN-HETEROSTRUCTURES | - |
dc.subject | DIODES | - |
dc.subject | METAL | - |
dc.subject | MECHANISM | - |
dc.subject | LEAKAGE | - |
dc.subject | PERFORMANCE | - |
dc.subject | INTERFACES | - |
dc.subject | LAYER | - |
dc.title | Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures | - |
dc.type | Article | - |
dc.identifier.wosid | 000341244500005 | - |
dc.identifier.scopusid | 2-s2.0-84906536785 | - |
dc.type.rims | ART | - |
dc.citation.volume | 29 | - |
dc.citation.issue | 9 | - |
dc.citation.publicationname | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.identifier.doi | 10.1088/0268-1242/29/9/095005 | - |
dc.contributor.nonIdAuthor | Ofuonye, Benedict | - |
dc.contributor.nonIdAuthor | Lee, Jaseun | - |
dc.contributor.nonIdAuthor | Yan, Minjun | - |
dc.contributor.nonIdAuthor | Zuo, Jian-Min | - |
dc.contributor.nonIdAuthor | Adesida, Ilesanmi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Schottky contact | - |
dc.subject.keywordAuthor | AlGaN/GaN heterostructure | - |
dc.subject.keywordAuthor | microstructure | - |
dc.subject.keywordAuthor | thermal annealing | - |
dc.subject.keywordPlus | N-TYPE GAN | - |
dc.subject.keywordPlus | BARRIER HEIGHT | - |
dc.subject.keywordPlus | GAN/ALGAN-HETEROSTRUCTURES | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | LEAKAGE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | LAYER | - |
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