DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xuan-Dung Mai | ko |
dc.contributor.author | An, Hey Jin | ko |
dc.contributor.author | Song, Jung Hoon | ko |
dc.contributor.author | Jang, Jihoon | ko |
dc.contributor.author | Kim, Sungwoo | ko |
dc.contributor.author | Jeong, Sohee | ko |
dc.date.accessioned | 2015-11-20T09:55:37Z | - |
dc.date.available | 2015-11-20T09:55:37Z | - |
dc.date.created | 2014-12-29 | - |
dc.date.created | 2014-12-29 | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY A, v.2, no.48, pp.20799 - 20805 | - |
dc.identifier.issn | 2050-7488 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201183 | - |
dc.description.abstract | We introduce a novel colloidal quantum dot solar cell (CQD SC) architecture, defined as inverted Schottky CQD SCs, which consists of a thin film of PbS CQDs sandwiched between a low-work-function, transparent conducting oxide (L-phi -TCO) and a high-work-function metal anode. On L-phi -TCO substrates, which were generated by coating a thin layer of polyethylenimine (PEI) onto FTO, a series of inverted Schottky CQD SCs with varied PbS CQD sizes and QD layer thicknesses were fabricated and characterized using capacitance-voltage (C-V), current-voltage (J-V), and external quantum efficiency (EQE). A Schottky junction, of about 180 nm in width, was formed at the front TCO contact, resulting in an EQE of approximately 70% in the short-wavelength region. The champion device reached 3.8% AM1.5 in power conversion efficiency, and retained efficiency over several weeks of air-exposure. A record open-circuit voltage (V-OC) of 0.75 V was achieved by employing PbS CQDs of 1.56 eV in the bandgap. Advantages including the simple device structure, efficient carrier extraction, and air-stability demonstrated in this study suggest that inverted Schottky CQD SCs can reduce the price per Watt ratio and facilitate the development of CQD tandem solar cells. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | METAL-OXIDE | - |
dc.subject | PHOTOVOLTAICS | - |
dc.subject | HETEROJUNCTION | - |
dc.subject | EFFICIENCY | - |
dc.subject | RECOMBINATION | - |
dc.subject | PHOTOCURRENT | - |
dc.subject | PERFORMANCE | - |
dc.subject | TRANSITION | - |
dc.subject | BEHAVIOR | - |
dc.subject | SOLIDS | - |
dc.title | Inverted Schottky quantum dot solar cells with enhanced carrier extraction and air-stability | - |
dc.type | Article | - |
dc.identifier.wosid | 000345531200048 | - |
dc.identifier.scopusid | 2-s2.0-84911946492 | - |
dc.type.rims | ART | - |
dc.citation.volume | 2 | - |
dc.citation.issue | 48 | - |
dc.citation.beginningpage | 20799 | - |
dc.citation.endingpage | 20805 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS CHEMISTRY A | - |
dc.identifier.doi | 10.1039/c4ta04305g | - |
dc.contributor.nonIdAuthor | Xuan-Dung Mai | - |
dc.contributor.nonIdAuthor | An, Hey Jin | - |
dc.contributor.nonIdAuthor | Jang, Jihoon | - |
dc.contributor.nonIdAuthor | Kim, Sungwoo | - |
dc.contributor.nonIdAuthor | Jeong, Sohee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | METAL-OXIDE | - |
dc.subject.keywordPlus | PHOTOVOLTAICS | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | RECOMBINATION | - |
dc.subject.keywordPlus | PHOTOCURRENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | SOLIDS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.