DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Soojung | ko |
dc.contributor.author | Kim, Jaehyeon | ko |
dc.contributor.author | Choi, Wonchul | ko |
dc.contributor.author | Sung, Gun Yong | ko |
dc.contributor.author | Jang, Moongyu | ko |
dc.date.accessioned | 2015-11-20T09:05:42Z | - |
dc.date.available | 2015-11-20T09:05:42Z | - |
dc.date.created | 2015-05-20 | - |
dc.date.created | 2015-05-20 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.6, pp.947 - 951 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201002 | - |
dc.description.abstract | The electric and the thermoelectric properties of 50-nm n- and p-type silicon nanowires (SiNWs) obtained by doping with boron di-fluoride and phosphorus, respectively, were investigated by varying the doping concentration from 1.0 x 10(20) to 2.5 x 10(21) cm (-3). The SiNWs were manufactured using conventional semiconductor processing techniques. The values of the optimized maximum power factor values were 1.59 and 2.43 mW center dot m K--1(-2) for the n- and the p-type SiNWs at a doping concentration of 4.0 x 10(20) cm(-3). For doping concentrations higher than over 4.0 x 10(20) cm(-3), the electrical resistivity was larger and the Seebeck coefficient was sharply lower due to imperfections in the crystal structure. For lower doping concentrations below 4.0 x 10(20) cm(-3), the increased resistivity had a dominant impact on the power factor. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | FIGURE | - |
dc.subject | MERIT | - |
dc.title | Optimization of the thermoelectric power factors in 50-nm n- and p-type silicon nanowires by varying the doping concentration | - |
dc.type | Article | - |
dc.identifier.wosid | 000352878000015 | - |
dc.identifier.scopusid | 2-s2.0-84928243747 | - |
dc.type.rims | ART | - |
dc.citation.volume | 66 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 947 | - |
dc.citation.endingpage | 951 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.identifier.doi | 10.3938/jkps.66.947 | - |
dc.contributor.nonIdAuthor | Kim, Soojung | - |
dc.contributor.nonIdAuthor | Choi, Wonchul | - |
dc.contributor.nonIdAuthor | Sung, Gun Yong | - |
dc.contributor.nonIdAuthor | Jang, Moongyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Thermoelectric power | - |
dc.subject.keywordAuthor | Si nanowire | - |
dc.subject.keywordAuthor | Seebeck coefficient | - |
dc.subject.keywordAuthor | Conventional semiconductor process | - |
dc.subject.keywordPlus | FIGURE | - |
dc.subject.keywordPlus | MERIT | - |
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