DC Field | Value | Language |
---|---|---|
dc.contributor.author | You, Byoung Kuk | ko |
dc.contributor.author | Byun, Myunghwan | ko |
dc.contributor.author | Kim, Seungjun | ko |
dc.contributor.author | Lee, Keon Jae | ko |
dc.date.accessioned | 2015-11-20T08:57:31Z | - |
dc.date.available | 2015-11-20T08:57:31Z | - |
dc.date.created | 2015-07-30 | - |
dc.date.created | 2015-07-30 | - |
dc.date.created | 2015-07-30 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.citation | ACS NANO, v.9, no.6, pp.6587 - 6594 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10203/200901 | - |
dc.description.abstract | Ge2Sb2Te5-based phase-change memories (PCMs), which undergo fast and reversible switching between amorphous and crystalline structural transformation, are being utilized for nonvolatile data storage. However, a critical obstacle is the high programming current of the PCM cell, resulting from the limited pattern size of the optical lithography-based heater. Here, we suggest a facile and scalable strategy of utilizing self-structured conductive filament (CF) nanoheaters for Joule heating of chalcogenide materials. This CF nanoheater can replace the lithographical-patterned conventional resistor-type heater. The sub-10 nm contact area between the CF and the phase-change material achieves significant reduction of the reset current. In particular, the PCM cell with a single Ni filament nanoheater can be operated at an ultralow writing current of 20 mu A. Finally, phase-transition behaviors through filament-type nanoheaters were directly observed by using transmission electron microscopy. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | CHANGE MEMORY | - |
dc.subject | SCALABLE NONVOLATILE | - |
dc.subject | BLOCK-COPOLYMER | - |
dc.subject | METAL OXIDES | - |
dc.subject | DATA-STORAGE | - |
dc.subject | NANOWIRES | - |
dc.subject | POWER | - |
dc.subject | CRYSTALLIZATION | - |
dc.subject | CHALLENGES | - |
dc.subject | GE2SB2TE5 | - |
dc.title | Self-Structured Conductive Filament Nanoheater for Chalcogenide Phase Transition | - |
dc.type | Article | - |
dc.identifier.wosid | 000356988500101 | - |
dc.identifier.scopusid | 2-s2.0-84935034161 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 6587 | - |
dc.citation.endingpage | 6594 | - |
dc.citation.publicationname | ACS NANO | - |
dc.identifier.doi | 10.1021/acsnano.5b02579 | - |
dc.contributor.localauthor | Lee, Keon Jae | - |
dc.contributor.nonIdAuthor | Byun, Myunghwan | - |
dc.contributor.nonIdAuthor | Kim, Seungjun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | phase-change memory | - |
dc.subject.keywordAuthor | low power consumption | - |
dc.subject.keywordAuthor | conductive filament | - |
dc.subject.keywordAuthor | nanoheater | - |
dc.subject.keywordAuthor | phase-change memory | - |
dc.subject.keywordAuthor | low power consumption | - |
dc.subject.keywordAuthor | conductive filament | - |
dc.subject.keywordAuthor | nanoheater | - |
dc.subject.keywordPlus | CHANGE MEMORY | - |
dc.subject.keywordPlus | SCALABLE NONVOLATILE | - |
dc.subject.keywordPlus | BLOCK-COPOLYMER | - |
dc.subject.keywordPlus | METAL OXIDES | - |
dc.subject.keywordPlus | DATA-STORAGE | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | CHALLENGES | - |
dc.subject.keywordPlus | GE2SB2TE5 | - |
dc.subject.keywordPlus | CHANGE MEMORY | - |
dc.subject.keywordPlus | SCALABLE NONVOLATILE | - |
dc.subject.keywordPlus | BLOCK-COPOLYMER | - |
dc.subject.keywordPlus | METAL OXIDES | - |
dc.subject.keywordPlus | DATA-STORAGE | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | CHALLENGES | - |
dc.subject.keywordPlus | GE2SB2TE5 | - |
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