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Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04 |
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