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Browse "School of Electrical Engineering(전기및전자공학부)" by Subject random-access storage

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Showing results 1 to 7 of 7

1	Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device Seo, Jung Won; Baik, Seung Jae; Kang, Sang Jung; Hong, Yun Ho; Yang, Ji-Hwan; Fang, Liang; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02
2	Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate Jung, Seungjae; Kong, Jaemin; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10
3	Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.100, no.9, 2012-02
4	Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices Jeong, Hu Young; Kim, Sung Kyu; Lee, JeongYong; Choi, Sung-Yool, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.10, pp.979 - 982, 2011
5	Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02
6	Transparent flexible resistive random access memory fabricated at room temperature Seo, Jung-Won; Park, Jae-Woo; Lim, Koeng-Su; Kang, Sang-Jung; Hong, Yun-Ho; Yang, Ji-Hwan; Fang, Liang; et al, APPLIED PHYSICS LETTERS, v.95, no.13, pp.133508, 2009-10
7	Transparent resistive random access memory and its characteristics for nonvolatile resistive switching Seo, Jung-Won; Park, Jae-Woo; Lim, Koeng-Su; Yang, Ji-Hwan; Kang, Sang-Jung, APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12

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