Showing results 1 to 3 of 3
Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs) Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09 |
Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source Kim J.M.; Lee Y.T.; Song J.D.; Kim, Joungho, JOURNAL OF CRYSTAL GROWTH, v.265, no.1-2, pp.8 - 13, 2004-04 |
Simulation of Surface Plasmon Coupled Conjugate Polymer for Polymer Light-Emitting Diodes Yeo, Ye-Won; Cho , Kwan-Hyun; Kim, Jin-Yeong; Choi, Kyung-Cheol, JOURNAL OF DISPLAY TECHNOLOGY, v.8, no.2, pp.65 - 69, 2012-02 |
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