Showing results 1 to 4 of 4
A nonquasi-static table-based small-signal model of heterojunction bipolar transistor Ko, Sangsoo; Koh, Kyungmin; Park, Hyun-Min; Hong, Songcheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.49, no.10, pp.1681 - 1686, 2002-10 |
Drain current thermal noise modeling for deep submicron n- and p-channel MOSFETs Han K.; Lee, Kwyro; Shin H., SOLID-STATE ELECTRONICS, v.48, no.12, pp.2255 - 2262, 2004-12 |
Gate Bias Dependence of Substrate Signal Coupling Effect in RF MOSFETs Je, Minkyu; Shin, Hyung-Cheol, IEEE ELECTRON DEVICE LETTERS, v.24, no.3, pp.183 - 185, 2003-03 |
Performance of new self-aligned InP/InGaAs heterojunction bipolar transistors using crystallographically defined emitter contact technology Kim, M; Kim, T; Jeon, S; Yoon, M; Kwon, Young Se; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.2B, pp.1139 - 1142, 2002-02 |
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