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A Comprehensive Study of the Resistive Switching Mechanism in Al/TiOx/TiO2/Al-Structured RRAM Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3049 - 3054, 2009-12 |
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04 |
Turn-around of threshold voltage shift in amorphous InGaZnO TFT under positive bias illumination stress Kim, Juwon; Kim, Hyunjin; Oh, Jungyeop; Choi, Sung-Yool; Park, Hamin, SOLID-STATE ELECTRONICS, v.201, 2023-03 |
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