Showing results 37 to 68 of 68
Quantum mechical simulation of hole transport in p-type Si Schottky barrier MOSFETs 신민철, NANO KOREA, 대한금속재료학회, 2010-08 |
Quantum simulation of hole transport in Si nanowire pMOSFETs 신민철, 한국반도체학술대회, 한국반도체학술대회, 2010-02 |
Quantum simulation of nano-scale schottky barrier MOSFETs Shin, Mincheol; Jang, M.; Lee, S., 2004 4th IEEE Conference on Nanotechnology, pp.396 - 398, 2004-08-16 |
Quantum Simulation of p-type Nanowire Schottky Barrier MOSFETs: Silicon versus Germanium Channel 이재현; Shin, Mincheol, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06 |
Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheol, NANO KOREA 2014, NANO KOREA, 2014-07-03 |
Quantum simulations of silicon nanowire field effect transistors: surface roughness and strain effects Shin, Min-Cheol; Jung, Hyo Eun, ISPSA-2014, ISPSA-2014, 2014-12-08 |
Quantum Transport due to a Reflection Grating in a Quantum Wire Park, K; Lee, S; Shin, Mincheol; Lee, EH; Yuk, J; Kwon, H, American Physical Society, APS March Meeting, American Physical Society, 1997-03-17 |
Quantum Transport of a Quantum Wire With a Reflection Grating Lee, S; Park, KW; Shin, Mincheol; Lee, EH; Yuk, J; Kwon, HC, IWPSD-97, IWPSD-97, 1997-12 |
Quantum Transport of Holes in Nanoscale FETs: Dependence on Channel Orientation and Impact of Heavy-hole Light-hole Coupling Shin, Mincheol, ACCMS-WGM 2011, 2011-04-01 |
Quantum-classicla crossover in biaxial nanospin system Kang, Doo Hyung; Kim, Gwang-Hee; Shin, Mincheol, NANO KOREA 2011, Nano-Korea, 2011-08-25 |
Room Temperature Investigation of Single Electron Tunneling (SET) Effects in Ag Droplets Grown on The Passivated Silicon Surface Park, KH; Ha, JS; Yun, WS; Shin, Mincheol; Park, KW; Lee, EH, STM, STM, 1997-07 |
Scaling studies of coaxially gated carbon nanotube MOSFETs Ahn, C.; Shin, Mincheol, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.548 - 549, 2006-10-22 |
Simulation of dual material gate InAs Schottky barrier field effect transistor 최원철; 이재현; 신민철, 제21회 한국반도체학술대회, 한국반도체학술대회, 2014-02-25 |
Simulation of III-V UTB SB-MOSFETs using tight-binding band-structure calculations 최호원; 이재현; 이여름; 신민철, 제21회 한국반도체학술대회, 한국반도체학술대회, 2014-02-25 |
Simulation Platform of Nano-devices as the Virtual Fab Lee, Minho; Lee, Seungchul; Shin, Min-Cheol; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09 |
Simulation study of ballistic hole current in p-type Germanium nanowire MOSFETs Jung, Ju Young; Shin, Mincheol, NANO KOREA 2013, NANO KOREA, 2013-07-10 |
Simulations of Schottky-barrier nanowire field effect transistors Lee, J.; Ahn, C.; Shin, Mincheol, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.552 - 553, 2006-10-22 |
Single Electron Charging Effect at Ag Droplets Grown on Sb-terminated Silicon Surface at Room Temperature Park, KH; Ha, JS; Shin, Mincheol; Yun, WS; Lee, EH, AVS(Americal Vaccum Society), AVS(Americal Vaccum Society), 1997-10 |
Soliton dynamics in Closed Two-dimansional Tunnel Junction Arrays Shin, Mincheol; Lee, S; Park, KW; Lee, EH, NPE'97(Nano-Physics and Electronics, '97), NPE'97, 1997-09 |
Strong Dependence of the Multichannel Ballistic Transport on the Geometrical Symmetry Shin, Mincheol; Park, KW; Lee, S; Lee, EH, ICSMM-9 (9th International Conference on Superlattices, Microstructures and Microdevices), ICSMM-9, 1996-07 |
Study of Hole-mobility Behaviors in Ultra-scaled Silicon Nanowire Field Effect Transistors: Multi-band Monte Carlo Approach 류훈; 정주영; 신민철, 제19회 한국반도체학술대회, 한국반도체학술대회, 2012-02-17 |
Surface roughness effects in Schottky Barrier tunneling transistors : comparative study against ohmic contact devices 정효은; Shin, Mincheol, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06 |
Thermal conductivity of ultrathin Si films with a periodic pore pattern Oh, Jung Hyun; Choi, Won Chul; Jang, Moon Kyu; Shin, Mincheol, 17th International Workshop on Computational Electronics, IWCE 2014, 2014-06-06 |
Thermoelectric characteristics of silicon/silicide hetero-junction structured thermoelectric modules Choi, Won Chul; Zyung, Taehyoung; Kim, Soojung; Jeon, Hyojin; Shin, Min-Cheol; Jang, Moongyu, NANO KOREA 2014, NANO KOREA, 2014-07-03 |
Thermoelectric effect of silicide and silicon hetero-junction structured devices Wonchul Choi; Shin, Mincheol, E-MRS 2013 SPRING MEETING, E-MRS, 2013-05-27 |
Thermoelectric properties of silicide/silicon hetero-junction structure Choi, Wonchul; Park, Young Sam; Huyn, Younghoon; Zyung, Taehyoung; Kim, Jaehyun; Kim, Soojung; Hyojin Jeon; et al, ENGE-12, 2012-09-18 |
Thermopower of Si nanowires under strong impurity scattering Oh, Jung Hyun; Shin, Mincheol; Lee, Seok-Hee, 18th international conference on electron dynamics in semiconductors, optoelectronics, Univ. of Tokyo, 2013-07-23 |
Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate Jeong, Woo-Jin; Kim, Tae Kyun; Moon, Jung Min; Shin, Min-Cheol; Lee, Seok-Hee, ISPSA-2014, ISPSA-2014, 2014-12-08 |
극히 높은 진동수의 자기장하의 2종 초전도체의 교류자화율 이준호; 신민철, 한국물리학회 2014년 봄학술논문발표회, 한국물리학회, 2014-04-25 |
위그너 방정식에 의한 가우션 웨이브 패킷과 무반사 포텐셜과의 상호작용 연구 이준호; Shin, Mincheol, 2016년 봄 한국물리학회, 한국물리학회, 2016-04 |
위그너 방정식에 의한 다중 층 원통형 나노선-FET의 양자 수송 연구 이준호; Shin, Mincheol, 2016년 봄 한국물리학회, 한국물리학회, 2016-04 |
위그너 수송 방정식을 이용한 사이리스터 분석 이준호; 신민철, 한국물리학회, 한국물리학회, 2015-04-24 |
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