Browse "School of Electrical Engineering(전기및전자공학부)" by Author Yoon, M
Showing results 1 to 12 of 12
| 240GHz fmax InP/InGaAs Single HBT fabrication and modeling Song, Y; Kim, T; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.21 - 22, 2002 |
| A New Submicron Gate Patterning Technique for InP MESFETs Using Crystallographical Etching Characteristics Yoon, M; Yang, Kyounghoon, MINT Millimeter-wave International Symposium, pp.25 - 28, 2003 |
| Effects of thermal stress on the performance of benzocyclobutene-passivated In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, pp.1910 - 1913, 2004-04 |
| Evolution of the surface cross-hatch pattern in InxGa1-xAs/GaAs layers grown by metal-organic chemical vapor deposition Yoon, M; Lee, B; Baek, JH; Park, HyoHoon; Lee, EH; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.68, no.1, pp.16 - 18, 1996-01 |
| Fabrication of Edge-Illuminated Refracting Facet Photodiodes with on-chip V-grooves Lee, B; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.51 - 52, 2003 |
| Fabrication of High fmax InP DHBTs Using a New Wet Etching Method Jeong, Y; Song, Y; Choi, S; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.347 - 348, 2003 |
| Fabrication of novel self-aligned InP/InGaAs HBT''s using dummy emitter Kim, M; Jeon, S; Yoon, M; Yang, Kyounghoon; Kwon, Young Se, Conference on Optoelectronic and Microelectronic Materials and Devices, pp.123, Conference on Optoelectronic and Microelectronic Materials and Devices, 2000-12-06 |
| Fabrication of sub-micron Y-gate InP MESFETs using crystallographically defined contact technology Yoon, M; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.134 - 135, 2002 |
| Fabrication of submicron Y-gate InP metal semiconductor field effect transistors using crystallographically defined contact technology Yoon, M; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.2237 - 2240, 2003-04 |
| Observation of Thermal Reliability of BCB Passivated InAlAs/InGaAs HEMTs Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.122 - 123, 2003-09-16 |
| Performance of new self-aligned InP/InGaAs heterojunction bipolar transistors using crystallographically defined emitter contact technology Kim, M; Kim, T; Jeon, S; Yoon, M; Kwon, Young Se; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.2B, pp.1139 - 1142, 2002-02 |
| Reliability of BCB Passivated InAlAs/InGaAs HEMTs Under Thermal Stress Kim, D; Yoon, M; Kim, T; Yang, Kyounghoon, IEEE, International Symposium on Compound Semiconductors, pp.231 - 232, IEEE, 2003 |
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