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Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory Yi, Boram; Hwang, Junghyeon; Oh, Tae Woo; Jeon, Sanghun; Jung, Seong-Ook; Yang, Ji-Woon, SOLID-STATE ELECTRONICS, v.206, 2023-08 |
Explicit Analytical Current-Voltage Model for Double-Gate Junctionless Transistors Hwang, Byeong Woon; Yang, Ji-Woon; Lee, Seok-Hee, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.1, pp.171 - 177, 2015-01 |
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