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Growth and Properties of InAsSb, AlGaSb, and InAsSb/AlGaSb Heterostructures Kim, Joungho; Yang, D.; Bhattacharya, P. K., Sixth International Conference on Molecular Beam Epitaxy, 1990 |
The validity of reciprocity and the Ebers-Moll model in abrupt heterojunction bipolar transistors J. C. Cowles,; Yang, Kyounghoon; A. Guiterrez-Aitken; Munns, G. O.; Chen, W. L.; Haddad, G. I.; Bhattacharya, P. K., Int. Semicond. Device Research Symp., pp.787 - 790, 1993 |
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