Showing results 1 to 7 of 7
Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices Chang, M.; Hwang, H.; Jeon, Sanghun., APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
Exchangeable self-curable liquid gate dielectric embedded field effect transistor Han, Jin-Woo; Ahn, Jae-Hyuk; Lee, Jeong-Oen; Yoon, Jun-Bo; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.97, no.3, 2010-07 |
Extraction of carriers photogenerated at p type amorphous SiC window layer in amorphous Si solar cells Baik, Seung Jae; Kang, Sang Jung; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.97, no.12, pp.122102, 2010-09 |
TiN/PECVD-Si3N4/TiN diaphragm-based capacitive-type MEMS acoustic sensor Lee, Jae Woo; Jeon, J. H.; Kim, Y. G.; Lee, S. Q.; Yang, W. S.; Lee, Jungsoo; Lee, Sang-Gug, ELECTRONICS LETTERS, v.52, no.6, pp.468 - 469, 2016-03 |
Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse I-d-V-g Chang, Man; Jo, Minseok; Jung, Seungjae; Lee, Joonmyoung; Jeon, Sanghun; Hwang, Hyunsang, APPLIED PHYSICS LETTERS, v.94, no.26, 2009-06 |
Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells Fang, Liang; Baik, Seung-Jae; Lim, Koeng-Su; Yoo, Seung-Hyup; Seo, Myung-Soo; Kang, Sang-Jung; Seo, Jung-Won, APPLIED PHYSICS LETTERS, v.96, no.19, pp.193501, 2010-05 |
Wide memory window in graphene oxide charge storage nodes Wang, Shuai; Pu, Jing; Chan, Daniel S. H.; Cho, Byung Jin; Loh, Kian Ping, APPLIED PHYSICS LETTERS, v.96, no.14, 2010-04 |
Discover