Showing results 1 to 4 of 4
Bistable memory and logic-gate devices fabricated by intercrossed stacking of graphene-ferroelectric hybrid ribbons Kim, Woo-Young; Kim, Hyeon-Don; Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Kim, Tae-Hyo; Lee, Hee Chul, MICRO & NANO LETTERS, v.11, no.7, pp.356 - 359, 2016-07 |
Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device Seo, Jung Won; Baik, Seung Jae; Kang, Sang Jung; Hong, Yun Ho; Yang, Ji-Hwan; Fang, Liang; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface Gupta, Dipti; Anand, Manish; Ryu, Seong-Wan; Choi, Yang-Kyu; Yoo, Seunghyup, APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12 |
Transparent resistive random access memory and its characteristics for nonvolatile resistive switching Seo, Jung-Won; Park, Jae-Woo; Lim, Koeng-Su; Yang, Ji-Hwan; Kang, Sang-Jung, APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12 |
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