Browse "School of Electrical Engineering(전기및전자공학부)" by Subject aluminum oxide gate dielectric
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| Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor Nam, Yunyong; Kim, Hee-Ok; Cho, Sung Haeng; Hwang, Chi-Sun; Kim, Taeho; Jeon, Sanghun; Park, Sang-Hee Ko, Journal of Information Display, v.17, no.2, pp.65 - 71, 2016-04 |
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